june 2009 doc id 15149 rev 2 1/10 10 STW2040 high voltage fast-switching npn power transistor features high voltage capability high dc current gain minimum lot to lot spread for reliable operation application switching mode power supplies description the STW2040 is manufactured using diffused collector in planar technology adopting base island layout. . figure 1. internal schematic diagram to-247 1 2 3 table 1. device summary order code marking package packaging STW2040 w2040 to-247 tube www.st.com
absolute maximu m ratings STW2040 2/10 doc id 15149 rev 2 1 absolute maximum ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ce = 0) 700 v v ceo collector-emitter voltage (i b = 0) 500 v v ebo emitter-base voltage (i c = 0) 9 v i c collector current 20 a i cm collector peak current 30 a i b base current 7 a i bm base peak current 10 a p tot total dissipation at t c = 25 c 125 w t stg storage temperature -65 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case __ max 1 c/w
STW2040 electrical characteristics doc id 15149 rev 2 3/10 2 electrical characteristics (t case = 25 c ; unless otherwise specified) table 4. electrical characteristics symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be = 0) v ce = 700 v 250 a i ebo emitter cut-off current (i c = 0) v eb = 9 v 1 ma v (br)ceo collector-emitter breakdown voltage (i b = 0) i c = 10 ma 500 v v ce(sat) (1) 1. pulsed duration = 300 s, duty cycle 1.5 % collector-emitter saturation voltage i c = 6 a __ i b = 1.2 a i c = 12 a _ i b = 2.4 a i c = 20 a _ i b = 4 a 0.2 0.3 0.6 0.5 v v v v be(sat) (1) base-emitter saturation voltage i c = 6 a __ i b = 1.2 a i c = 12 a _ i b = 2.4 a 1.2 1.5 v v h fe (1) dc current gain i c = 10 ma v ce = 5 v i c = 6 a ___ v ce = 5 v i c = 12 a v ce = 5 v 8 15 10 21 27 t on t f t s resistive load turn-on time fall time storage time v cc = 200 v v be(off) = -5 v i c = 7.5 a i b(on) = 1.5 a i b(off) = -3 a 140 100 1.6 ns ns s t s t f inductive load storage time fall time v cl = 250 v v be(off) = -5 v i c = 7.5 a i b(on) = 1.5 a i b(off) = -3 a 1.8 30 s ns
electrical characteristics STW2040 4/10 doc id 15149 rev 2 2.1 electrical characteristic (curves) figure 2. safe operating area figure 3. derating curve figure 4. reverse biased safe operating area figure 5. output characteristics figure 6. dc current gain (v ce = 1 v) figure 7. dc current gain (v ce = 5 v)
STW2040 electrical characteristics doc id 15149 rev 2 5/10 2.2 test circuits figure 12. inductive load switching test circuit 1. fast electronic switch 2. non-inductive resistor 3. fast recovery rectifier figure 8. collector-emitter saturation voltage figure 9. base-emitter saturation voltage figure 10. inductive load switching time fi gure 11. resistive load switching time
electrical characteristics STW2040 6/10 doc id 15149 rev 2 figure 13. resistive load switching test circuit 1. fast electronic switch 2. non-inductive resistor
STW2040 package mechanical data doc id 15149 rev 2 7/10 3 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STW2040 8/10 doc id 15149 rev 2 dim. mm. min. typ. max. a4. 8 55.15 a1 2.20 2.60 b 1.0 1.40 b 1 2.0 2.40 b 2 3 .0 3 .40 c0.40 0. 8 0 d1 9 . 8 5 20.15 e 15.45 15.75 e5.45 l 14.20 14. 8 0 l1 3 .70 4. 3 0 l2 1 8 .50 ?p 3 .55 3 .65 ?r 4.50 5.50 s 5.50 to-247 mechanical data
STW2040 revision history doc id 15149 rev 2 9/10 4 revision history table 5. document revision history date revision changes 07-nov-2008 1 initial release. 10-jun-2009 2 document status promoted from preliminary data to datasheet.
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